Sentarus TCAD仿真示例代码

实验本意是好的，只是学生操作的时候出了点问题

关键代码

;;;;;;;;;;;;;;;;;;;;;;;;;;; n1-dvs.cmd ;;;;;;;;;;;;;;;;;;;;;;
(sde:clear)
(sde:set-process-up-direction "+z")

(sdegeo:set-default-boolean "ABA")

;vertical parameters

(define TPP 3.0)
(define TN 5.0)
(define TNN 2.0)



;********************************* Create region **********************************

;-create Si
(sdegeo:create-rectangle
	(position 0.0 0.0 0.0)
	(position 5.0 10.0 0.0)
	"Silicon" "R.Si")



;***************************************** Doping **********************************

;PP doping
; Constant doping profile in a box-shaped area
(define NAME "PP")
; - Common dopants: 
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "AluminumActiveConcentration" 
(sdedr:define-refinement-window (string-append "RW." NAME) 
	"Rectangle"  
	(position 0.0 0.0 0.0)  (position 5.0 3.0 0.0) 
)
(sdedr:define-constant-profile (string-append "DC." NAME)
	"AluminumActiveConcentration" 5.0e18
)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
	(string-append "DC." NAME) (string-append "RW." NAME)
)


;N doping
; Constant doping profile in a box-shaped area
(define NAME "N")
; - Common dopants: 
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "AluminumActiveConcentration" 
(sdedr:define-refinement-window (string-append "RW." NAME) 
	"Rectangle"  
	(position 0.0 3.0 0.0)  (position 5.0 8.0 0.0) 
)
(sdedr:define-constant-profile (string-append "DC." NAME)
	"NitrogenActiveConcentration" 1.0e16
)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
	(string-append "DC." NAME) (string-append "RW." NAME)
)

;NN doping
; Constant doping profile in a box-shaped area
(define NAME "NN")
; - Common dopants: 
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "AluminumActiveConcentration" 
(sdedr:define-refinement-window (string-append "RW." NAME) 
	"Rectangle"  
	(position 0.0 8.0 0.0)  (position 5.0 10.0 0.0) 
)
(sdedr:define-constant-profile (string-append "DC." NAME)
	"NitrogenActiveConcentration" 1.0e20
)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
	(string-append "DC." NAME) (string-append "RW." NAME)
)


;************************************ Contact  define *******************************
;Anode Contact
; - Assign a user-given contact to the surface elements (2d: edges, 3d: faces)
; - identified by the user-given point. 
(define CONT "anode")
(define POINT (position 2.5 0.0 0.0))
(sdegeo:define-contact-set CONT  4.0  (color:rgb 1.0 0.0 0.0 ) "##" )
(sdegeo:set-current-contact-set CONT)
; - 2D:
(sdegeo:define-2d-contact (find-edge-id POINT) CONT) 
; - 3D:
; (sdegeo:define-3d-contact (find-face-id POINT) CONT)





;Cathode Contact
; - Assign a user-given contact to the surface elements (2d: edges, 3d: faces)
; - identified by the user-given point. 
(define CONT "cathode")
(define POINT (position 2.5 10.0 0.0))
(sdegeo:define-contact-set CONT  4.0  (color:rgb 1.0 0.0 0.0 ) "##" )
(sdegeo:set-current-contact-set CONT)
; - 2D:
(sdegeo:define-2d-contact (find-edge-id POINT) CONT) 
; - 3D:
; (sdegeo:define-3d-contact (find-face-id POINT) CONT)



;******************************** Mesh ****************************************

(sdedr:define-refeval-window
	"RW.Global" "Rectangle"
	(position 0.0 0.0 0.0)
	(position 5.0 10.0 0.0)
	)

(sdedr:define-refinement-size
	"RD.Global"
	2.0 0.5
	0.03 0.03
	)

(sdedr:define-refinement-function "RD.Global" 
   "DopingConcentration" "MaxTransDiff" 1.0)

(sdedr:define-refinement-function "RD.Global" 
   "hDensity" "MaxTransDiff" 1.0)

(sdedr:define-refinement-function "RD.Global" 
   "ElectrostaticPotential" "MaxTransDiff" 1.0)



(sdedr:define-refinement-function "RD.Global" 
	"MaxLenInt" "Silicon" "Contact" 1e-3 1.2  
)

(sdedr:define-refinement-placement "RPL.Global" 
	"RD.Global"  "RW.Global")

(sde:build-mesh "-AI" "n1")

;;;;;;;;;;;;;;;;;;;;;;;;;;; pp2-des.cmd ;;;;;;;;;;;;;;;;;;;;;;

File {
	Grid= "n1_msh.tdr"
	Current   = "n2_des.plt"	
	Plot      = "n2_des.tdr"
	Output= "n2_des.log"
	Parameter= "pp2_des.par"	
	
}


Electrode{
	{Name= "anode"  Voltage= 0.0}
	{Name= "cathode"  Voltage= 0.0}
}

Physics(Material="Silicon"){
	Fermi
	
	Mobility(
	DopingDependence
	Enormal
	HighFieldSaturation
	)
	
	
	Recombination(
		SRH(Dopingdependence)
		Auger
	)
	EffectiveIntrinsicDensity(OldSlotboom)
	
}


Math {
	Digits= 7
	Extrapolate
	ErrEff(electron)= 1e4
	ErrEff(hole)= 1e4
	RHSmin= 1e-20
	RHSmax= 1e30
	RHSFactor= 1e30
	Notdamped= 20
	Iterations= 15
	ExitOnFailure
	eMobilityAveraging= ElementEdge
	hMobilityAveraging= ElementEdge
	ExtendedPrecision(128)
	NumberofThreads= 4 
}


Solve {
	*- Initial Solution
	Coupled(Iterations=1000 LineSearchDamping=1e-2){ Poisson }
	Coupled(Iterations=1000 LineSearchDamping=1e-2){ Poisson Electron }
	Coupled(Iterations=1000 LineSearchDamping=1e-2){ Poisson Electron Hole }
	  
	NewCurrentFile= "IV_"
	Quasistationary (
		Initialstep= 1e-3 Increment= 1.5 Decrement= 2.0
		Maxstep= 0.05 Minstep= 1.e-10
		Goal { Name="anode" Voltage= 10.0 }
	) { Coupled { Poisson Electron Hole } }
		   	   
}